The Optimization of 3.3 kV 4H-SiC JBS Diodes

The article reports a comprehensive study optimizing the OFF- and ON-state characteristics of 3.3 kV junction barrier Schottky (JBS) diodes made using nickel, titanium, molybdenum contact metals. In this design, same implants used in optimized termination region are to form P-regions JBS active area. width spacing varied optimize both ON- OFF-state device. All tested displayed high blocking voltages ideal turn-on up rated current 2 A. However, leakage height (SBH) were found scale with ratio p + regions. Full Schottkys, without regions, those very wide regions had lowest SBH (1.61 eV for Ni, 1.11 Mo, 0.87 Ti) highest leakage. Those openings $2 ~\mu \text{m}$ leakage, but they suffered severe pinching from surrounding increasing their SBH. best performing Ni Mo devices narrowest pitch, implants/Schottky wide. These offered balanced device excellent performance, while guaranteed relatively low forward voltage drop.